Citation:
Pinnington T, Patitsas SN, Lavoie C, Sanderson A, Tiedje T. Cross-sectional imaging of doped layers in epitaxial gallium arsenide films by scanning tunneling microscopy. Journal of Vacuum Science and Technology, B. 1993;11(3):908-911.
Department of Physics & Astronomy, University of Lethbridge, 4401 University Drive W
Lethbridge, Alberta, Canada, T1K3M4
